Nestor Fabian Ghenzi

According to our database, Nestor Fabian Ghenzi authored at least 2 papers between 2014 and 2015.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2015

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films.

Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda

Microelectron. Reliab., 2015

2014

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit.

P. Stoliar, Pablo Levy, Maria Jose Sanchez, A. G. Leyva, C. A. Albornoz, Fernando Gomez-Marlasca, A. Zanini, C. Toro Salazar, Nestor Fabian Ghenzi, Marcelo J. Rozenberg

IEEE Trans. Circuits Syst. II Express Briefs, 2014