Nathan Strutt

According to our database, Nathan Strutt authored at least 4 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Intel PowerVia Technology: Backside Power Delivery for High Density and High-Performance Computing.

Walid M. Hafez, P. Agnihotri, M. Asoro, M. Aykol, B. Bains, R. Bambery, M. Bapna, A. Barik, A. Chatterjee, P. C. Chiu, T. Chu, C. Firby, K. Fischer, M. Fradkin, Hannes Greve, A. Gupta, E. Haralson, M. Haran, Jeffery Hicks, A. Illa, M. Jang, S. Klopcic, M. Kobrinsky, B. Kuns, H.-h. Lai, G. Lanni, S.-H. Lee, N. Lindert, C.-l. Lo, Y. Luo, G. Malyavanatham, B. Marinkovic, Y. Maymon, M. Nabors, J. Neirynck, P. Packan, A. Paliwal, L. Pantisano, Leif Paulson, Padma Penmatsa, Chetan Prasad, Conor Puls, T. Rahman, R. Ramaswamy, S. Samant, Bernhard Sell, K. Sethi, F. Shah, M. Shamanna, K. Shang, Q. Li, M. Sibakoti, J. Stoeger, Nathan Strutt, R. Thirugnanasambandam, C. Tsai, X. Wang, A. Wang, S.-j. Wu, Q. Xu, X.-h. Zhong, S. Natarajan

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021

Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability.

Yao-Feng Chang, Ilya Karpov, Reed Hopkins, David Janosky, Jacob Medeiros, Benjamin Sherrill, Jiahan Zhang, Yifu Huang, Tanmoy Pramanik, Albert B. Chen, Tony Acosta, Abdullah Guler, James A. O'Donnell, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jack C. Lee, Jeffrey Hicks

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

eNVM RRAM reliability performance and modeling in 22FFL FinFET technology.

Yao-Feng Chang, James A. O'Donnell, Tony Acosta, Roza Kotlyar, Albert B. Chen, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jeff Hicks

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

A 3.6Mb 10.1Mb/mm² Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V.

Pulkit Jain, Umut Arslan, Meenakshi Sekhar, Blake C. Lin, Liqiong Wei, Tanaya Sahu, Juan Alzate-vinasco, Ajay Vangapaty, Mesut Meterelliyoz, Nathan Strutt, Albert B. Chen, Patrick Hentges, Pedro A. Quintero, Chris Connor, Oleg Golonzka, Kevin Fischer, Fatih Hamzaoglu

Proceedings of the IEEE International Solid- State Circuits Conference, 2019