Naoto Matsuo

According to our database, Naoto Matsuo authored at least 9 papers between 2005 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance.

Naoto Matsuo, Akira Heya, Kazushige Yamana, Koji Sumitomo, Tetsuo Tabei

IEICE Trans. Electron., 2024

2022

Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO₂/Si Structure.

Naoto Matsuo, Kazuki Yoshida, Koji Sumitomo, Kazushige Yamana, Tetsuo Tabei

IEICE Trans. Electron., August, 2022

2016

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation.

Akira Heya, Naoto Matsuo, Kazuhiro Kanda

IEICE Trans. Electron., 2016

2014

Improvement of Hump Phenomenon of Thin-Film Transistor by SiN_X Film.

Takahiro Kobayashi, Naoto Matsuo, Akira Heya, Shin Yokoyama

IEICE Trans. Electron., 2014

Study of charge retention mechanism for DNA memory FET.

Shoko Maeno, Naoto Matsuo, Shohei Nakamura, Akira Heya, Tadao Takada, Kazushige Yamana, Masataka Fukuyama, Shin Yokoyama

IEICE Electron. Express, 2014

2011

Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness.

Naoto Matsuo, Akira Heya

IEICE Electron. Express, 2011

2010

Properties of SiO₂ Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing.

Akira Heya, Naoto Matsuo

IEICE Trans. Electron., 2010

2007

Fabrication of tunneling dielectric thin-film transistor with very thin SiN_x films onto source and drain.

Naoto Matsuo, Atsushi Fukushima, Kensaku Ohkura, Akira Heya, Shin Yokoyama

IEICE Electron. Express, 2007

2005

Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing.

Naoya Kawamoto, Naoto Matsuo, Atsushi Masuda, Yoshitaka Kitamon, Hideki Matsumura, Yasunori Harada, Tadaki Miyoshi, Hiroki Hamada

IEICE Trans. Electron., 2005