Naoteru Shigekawa

According to our database, Naoteru Shigekawa authored at least 6 papers between 2004 and 2010.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2010

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs.

Naoteru Shigekawa, Suehiro Sugitani

IEICE Trans. Electron., 2010

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness.

Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa

IEICE Trans. Electron., 2010

2009

Numerical analysis of impact of stress in passivation films on electrical properties in AlGaN/GaN heterostructures.

Naoteru Shigekawa, Suehiro Sugitani

IEICE Electron. Express, 2009

2005

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates.

Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, Kenji Shiojima, Kohji Hohkawa

IEICE Electron. Express, 2005

SAW characteristics of GaN layers with surfaces exposed by dry etching.

Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki, Kohji Hohkawa

IEICE Electron. Express, 2005

2004

Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation.

Kenji Shiojima, Suehiro Sugitani, Naoteru Shigekawa

IEICE Electron. Express, 2004