Nadia Rezzak

According to our database, Nadia Rezzak authored at least 3 papers between 2011 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.

Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li

Microelectron. Reliab., 2012

2011

The sensitivity of radiation-induced leakage to STI topology and sidewall doping.

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby

Microelectron. Reliab., 2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné

Microelectron. Reliab., 2011