N. Mohankumar

According to our database, N. Mohankumar authored at least 8 papers between 2009 and 2015.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2015

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal

Microelectron. J., 2015

2014

Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs.

Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N. Mohankumar, Chandan Kumar Sarkar

Microelectron. Reliab., 2014

Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps.

P. Anandan, A. Nithya, N. Mohankumar

Microelectron. Reliab., 2014

2013

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics.

D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar

Microelectron. Reliab., 2013

Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor Networks.

Radhakrishnan Saravanakumar, N. Mohankumar, J. Raja

Int. J. Distributed Sens. Networks, 2013

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric.

D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar

Int. J. Circuit Theory Appl., 2013

2012

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions.

Kalyan Koley, Binit Syamal, Atanu Kundu, N. Mohankumar, Chandan Kumar Sarkar

Microelectron. Reliab., 2012

2009

Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications.

N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar

Microelectron. Reliab., 2009