N. Dias

According to our database, N. Dias authored at least 1 paper in 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

A 14 nm SoC platform technology featuring 2^nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um² SRAM cells, optimized for low power, high performance and high density SoC products.

Chia-Hong Jan, F. Al-amoody, H.-Y. Chang, T. Chang, Y.-W. Chen, N. Dias, Walid M. Hafez, Doug B. Ingerly, M. Jang, Eric Karl, S. K.-Y. Shi, K. Komeyli, H. Kilambi, A. Kumar, K. Byon, C.-G. Lee, J. Lee, T. Leo, P.-C. Liu, N. Nidhi, R. Olac-vaw, C. Petersburg, K. Phoa, Chetan Prasad, C. Quincy, R. Ramaswamy, T. Rana, L. Rockford, Aravinth Subramaniam, C. Tsai, Peter Vandervoorn, L. Yang, A. Zainuddin, Peng Bai

Proceedings of the Symposium on VLSI Circuits, 2015