N. B. Balamurugan

According to our database, N. B. Balamurugan authored at least 6 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2024

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model.

E. Rajalakshmi, N. B. Balamurugan, M. Hemalatha, M. Suguna

Microelectron. J., 2024

A Comparative Review: Performance Parameters of Fin, Nanowire and Nanosheet Field Effect Transistors on 5nm Node.

V. Karutharaja, N. B. Balamurugan, M. Suguna, D. Sriram Kumar

Proceedings of the 7th International Conference on Devices, Circuits and Systems, 2024

2016

Analytical Modeling of Dual Material Gate All around Stack Architecture of Tunnel FET.

N. B. Balamurugan, G. LakshmiPriya, S. Manikandan, G. Srimathi

Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016

2014

A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs.

P. Suveetha Dhanaselvam, N. B. Balamurugan

Microelectron. J., 2014

2013

A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs.

P. Suveetha Dhanaselvam, N. B. Balamurugan, V. N. Ramakrishnan

Microelectron. J., 2013

Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects.

P. Suveetha Dhanaselvam, N. B. Balamurugan

Microelectron. J., 2013