N. Arpatzanis

According to our database, N. Arpatzanis authored at least 4 papers between 2006 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of six.

2011

Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors.

N. A. Hastas, N. Arpatzanis, C. A. Dimitriadis, Julien Brochet, François Templier, G. Kamarinos

Microelectron. Reliab., 2011

2008

Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress.

N. Arpatzanis, Argyrios T. Hatzopoulos, Dimitrios H. Tassis, C. A. Dimitriadis, François Templier, Maher Oudwan, G. Kamarinos

Microelectron. Reliab., 2008

2006

Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors.

Dimitrios H. Tassis, Argyrios T. Hatzopoulos, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos

Microelectron. Reliab., 2006

Effects of hot carriers in offset gated polysilicon thin-film transistors.

Argyrios T. Hatzopoulos, Dimitrios H. Tassis, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos

Microelectron. Reliab., 2006