Myeong-O. Kim

According to our database, Myeong-O. Kim authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features.

Yesin Ryu, Sung-Gi Ahn, Jae Hoon Lee, Jaewon Park, Yong-Ki Kim, Hyochang Kim, Yeong Geol Song, Han-Won Cho, Sunghye Cho, Seung Ho Song, Haesuk Lee, Useung Shin, Jonghyun Ahn, Je-Min Ryu, Suk Han Lee, Kyounghwan Lim, Jungyu Lee, Jeong Hoan Park, Jae-Seung Jeong, Sunghwan Jo, Dajung Cho, Sooyoung Kim, Minsu Lee, Hyunho Kim, Minhwan Kim, Jae San Kim, Jinah Kim, Hyun Gil Kang, Myung-Kyu Lee, Sung-Rae Kim, Young-Cheon Kwon, Young-Yong Byun, Kijun Lee, Sangkil Park, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee

IEEE J. Solid State Circuits, 2023

2022

A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features.

Yesin Ryu, Young-Cheon Kwon, Jae Hoon Lee, Sung-Gi Ahn, Jaewon Park, Kijun Lee, Yu Ho Choi, Han-Won Cho, Jae San Kim, Jungyu Lee, Haesuk Lee, Seung Ho Song, Je-Min Ryu, Yeong Ho Yun, Useung Shin, Dajung Cho, Jeong Hoan Park, Jae-Seung Jeong, Suk Han Lee, Kyounghwan Lim, Tae-Sung Kim, Kyungmin Kim, Yu Jin Cha, Ik Joo Lee, Tae Kyu Byun, Han Sik Yoo, Yeong Geol Song, Myung-Kyu Lee, Sunghye Cho, Sung-Rae Kim, Ji-Min Choi, Hyoungmin Kim, Soo Young Kim, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022