Muhammad Asif

Affiliations:

Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
Xidian University, School of Microelectronics, China (former)

According to our database¹, Muhammad Asif authored at least 3 papers between 2018 and 2019.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

Legend:

Book

In proceedings

Article

PhD thesis

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Bibliography

2019

A 30 MHz-3 GHz watt-level stacked-FET linear power amplifier.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2019

2018

A broadband high efficiency monolithic power amplifier with GaAs HBT.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2018

A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2018

Muhammad Asif

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