Mozhgan Hosseinzadeh

According to our database, Mozhgan Hosseinzadeh authored at least 2 papers in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs.

Delgermaa Nergui, Mozhgan Hosseinzadeh, Y. A. Mensah, Harrison P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler

Proceedings of the IEEE International Reliability Physics Symposium, 2024

High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical Receivers.

Mozhgan Hosseinzadeh, Milad Frounchi, George N. Tzintzarov, Jeffrey W. Teng, John D. Cressler

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024