Moon-Sook Park

According to our database, Moon-Sook Park authored at least 4 papers between 2006 and 2009.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2009

BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel.

Young-Chan Jang, Hoeju Chung, Youngdon Choi, Hwan-Wook Park, Jaekwan Kim, Soouk Lim, Jung Sunwoo, Moon-Sook Park, Hyung-Seuk Kim, Sang-Yun Kim, Yun-Sang Lee, Woo-Seop Kim, Jung-Bae Lee, Jei-Hwan Yoo, Changhyun Kim

IEEE J. Solid State Circuits, 2009

2007

An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme.

Kyu-Hyoun Kim, Hoeju Chung, Woo-Seop Kim, Moon-Sook Park, Young-Chan Jang, Jinyoung Kim, Hwan-Wook Park, Uksong Kang, Paul W. Coteus, Joo-Sun Choi, Changhyun Kim

IEEE J. Solid State Circuits, 2007

2006

A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter.

Kyu-Hyoun Kim, Young-Soo Sohn, Chan-Kyoung Kim, Moon-Sook Park, Dong-Jin Lee, Woo-Seop Kim, Changhyun Kim

IEEE J. Solid State Circuits, 2006

An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme.

Kyu-Hyoun Kim, Uksong Kang, Hoeju Chung, Dukha Park, Woo-Seop Kim, Young-Chan Jang, Moon-Sook Park, Hoon Lee, Jinyoung Kim, Jung Sunwoo, Hwan-Wook Park, Hyun-Kyung Kim, Su-Jin Chung, Jae-Kwan Kim, Hyung-Seuk Kim, Kee-Won Kwon, Young-Taek Lee, Joo-Sun Choi, Changhyun Kim

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006