Mohammad Imran Younus

According to our database, Mohammad Imran Younus authored at least 3 papers between 2003 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction.

Harold Pilo, Chad A. Adams, Igor Arsovski, Robert M. Houle, Steve Lamphier, Michael M. Lee, Frank Pavlik, Sushma N. Sambatur, Adnan Seferagic, Richard Wu, Mohammad Imran Younus

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2012

DRC-free high density layout exploration with layout morphing and patterning quality assessment, with application to SRAM.

Amith Singhee, Emrah Acar, Mohammad Imran Younus, Rama N. Singh, Aditya Bansal

Proceedings of the Thirteenth International Symposium on Quality Electronic Design, 2012

2003

Ultralow-power SRAM technology.

Randy W. Mann, W. W. (Bill) Abadeer, Matthew J. Breitwisch, O. Bula, Jeff S. Brown, Bryant C. Colwill, Peter E. Cottrell, William T. Crocco Jr., Stephen S. Furkay, Michael J. Hauser, Terence B. Hook, Dennis Hoyniak, James M. Johnson, Chung Hon Lam, Rebecca D. Mih, J. Rivard, Atsushi Moriwaki, E. Phipps, Christopher S. Putnam, BethAnn Rainey, James J. Toomey, Mohammad Imran Younus

IBM J. Res. Dev., 2003