Mohamed Trabelsi
Orcid: 0000-0001-6904-8756Affiliations:
- French Naval Academy, Brest, France
- University of Monastir, Tunisia
- University of Lille, France
According to our database1,
Mohamed Trabelsi
authored at least 14 papers
between 2011 and 2019.
Collaborative distances:
Collaborative distances:
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Bibliography
2019
Power Smoothing in MCT System with Supercapacitor Based Energy Storage for Islanded Grid.
Proceedings of the IECON 2019, 2019
Proceedings of the IEEE International Conference on Industrial Technology, 2019
2018
Data-driven approach for isolated PV shading fault diagnosis based on experimental I-V curves analysis.
Proceedings of the IEEE International Conference on Industrial Technology, 2018
2017
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
2016
Real-Time Switches Fault Diagnosis Based on Typical Operating Characteristics of Five-Phase Permanent-Magnetic Synchronous Machines.
IEEE Trans. Ind. Electron., 2016
Open-switch and open-phase real time FDI process for multiphase PM Synchronous Motors.
Proceedings of the 25th IEEE International Symposium on Industrial Electronics, 2016
A sliding mode observer for inverter open-switch fault diagnostic in sensorless induction motor drive.
Proceedings of the IECON 2016, 2016
Proceedings of the 2016 International Conference on Design and Technology of Integrated Systems in Nanoscale Era, 2016
2015
Numerical Determination of Permittivity and Permeability Tensors of a Dielectric Metamaterial Composed of an Infinite Number of Split Ring Resonators.
Wirel. Pers. Commun., 2015
2014
Ultra low power and high gain switched CMOS gm-boosted current reused mixer for wireless multi-standard applications.
Microelectron. J., 2014
A 0.9 V low power reconfigurable CMOS folded cascode LNA for multi-standard wireless applications.
Proceedings of the 9th International Design and Test Symposium, 2014
Proceedings of the 9th International Design and Test Symposium, 2014
2011
A 0.9-V, 7-mW UWB LNA for 3.1-10.6-GHz wireless applications in 0.18-µm CMOS technology.
Microelectron. J., 2011