Mohamed Amir Abdi

According to our database, Mohamed Amir Abdi authored at least 3 papers between 2009 and 2011.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2011

Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects.

Fayçal Djeffal, Toufik Bentrcia, Mohamed Amir Abdi, Toufik Bendib

Microelectron. Reliab., 2011

A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs.

Fayçal Djeffal, Toufik Bendib, Mohamed Amir Abdi

Microelectron. J., 2011

2009

Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs.

Mohamed Amir Abdi, Fayçal Djeffal, Mohammed Meguellati, Djemai Arar

Proceedings of the 16th IEEE International Conference on Electronics, 2009