Mohamed Ali Belaïd

According to our database, Mohamed Ali Belaïd authored at least 21 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A Comprehensive Approach to Flexible LVRT Strategies for Inverter-Based PPMs Enhancing Voltage-Support, Overcurrent Protection, and DC-Link Voltage Quality.

Fathia Letaief, Mahmoud Hamouda, Mohamed Ali Belaïd, Kamal Al-Haddad

IEEE Access, 2024

2020

RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band.

Mohamed Ali Belaïd, Ahmed Almusallam, Mohamed Masmoudi

IET Circuits Devices Syst., 2020

2018

Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests.

Mohamed Ali Belaïd

Microelectron. Reliab., 2018

Symptom reliability: S-parameters evaluation of power laterally diffused-metal-oxide-semiconductor field-effect transistor after pulsed-RF life tests for a radar application.

Mohamed Ali Belaïd

IET Circuits Devices Syst., 2018

2016

Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests.

Mohamed Ali Belaïd, H. Kaouach, Jaleleddine Ben Hadj Slama

Microelectron. Reliab., 2016

2015

Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests.

Mohamed Ali Belaïd

Microelectron. Reliab., 2015

2014

Performance drifts of N-MOSFETs under pulsed RF life test.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry

Microelectron. Reliab., 2014

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests.

Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry

Microelectron. J., 2014

2013

Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests.

Mohamed Tlig, Jaleleddine Ben Hadj Slama, Mohamed Ali Belaïd

Microelectron. Reliab., 2013

2012

Failure analysis of hot-electron effect on power RF N-LDMOS transistors.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012

2011

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.

Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline

Microelectron. Reliab., 2011

2010

Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors.

Mohamed Ali Belaïd, K. Daoud

Microelectron. Reliab., 2010

2007

Study of hot-carrier effects on power RF LDMOS device reliability.

M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline

Microelectron. Reliab., 2007

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests.

Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon

Microelectron. Reliab., 2007

Reliability study of power RF LDMOS device under thermal stress.

Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon

Microelectron. J., 2007

2006

Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.

Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline

Microelectron. Reliab., 2006

Hot carrier reliability of RF N- LDMOS for S Band radar application.

M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline

Microelectron. Reliab., 2006

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.

Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon

Microelectron. Reliab., 2006

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.

M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline

Proceedings of the Canadian Conference on Electrical and Computer Engineering, 2006

2005

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.

Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon

Microelectron. Reliab., 2005

2004

Reliability study of Power RF LDMOS for Radar Application.

Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata

Microelectron. Reliab., 2004