Miyo Miyashita

According to our database, Miyo Miyashita authored at least 10 papers between 1999 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz.

Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Hiroaki Maehara, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto

IEEE J. Solid State Circuits, 2021

2020

A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications.

Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2018

Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications.

Kazuya Yamamoto, Miyo Miyashita, Kenji Mukai, Shigeru Fujiwara, Satoshi Suzuki, Hiroaki Seki

IEICE Trans. Electron., 2018

2017

Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response.

Kazuya Yamamoto, Miyo Miyashita, Takayuki Matsuzuka, Tomoyuki Asada, Kazunobu Fujii, Satoshi Suzuki, Teruyuki Shimura, Hiroaki Seki

IEICE Trans. Electron., 2017

2016

Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets.

Kazuya Yamamoto, Takayuki Matsuzuka, Miyo Miyashita, Kenichi Horiguchi, Shigeo Yamabe, Satoshi Suzuki, Hiroaki Seki

IEICE Trans. Electron., 2016

2015

0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme.

Kazuya Yamamoto, Takayuki Matsuzuka, Miyo Miyashita, Kenichi Maeda, Satoshi Suzuki, Hiroaki Seki

IEICE Trans. Electron., 2015

A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module.

Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Yoshinobu Sasaki, Satoshi Suzuki, Hiroaki Seki

IEICE Trans. Electron., 2015

A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage.

Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Hiroaki Seki

IEICE Trans. Electron., 2015

2007

3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology.

Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura

IEICE Trans. Electron., 2007

1999

A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications.

Kazuya Yamamoto, Takao Moriwaki, Takayuki Fujii, Jun Otsuji, Miyo Miyashita, Yukio Miyazaki, Kazuo Nishitani

IEEE J. Solid State Circuits, 1999