Miquel Vellvehí

According to our database, Miquel Vellvehí authored at least 28 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics.

Conrad Ferrer, Oriol Avino-Salvado, Miquel Vellvehí, Xavier Jordà, Xavier Perpiñà

IEEE Trans. Instrum. Meas., 2023

2021

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits.

Miquel Vellvehí, Xavier Perpiñà, Javier Leon, Oriol Avino-Salvado, Conrad Ferrer, Xavier Jordà

IEEE Trans. Ind. Electron., 2021

2019

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging.

Xavier Perpiñà, Ferran Reverter, Javier Leon, Enrique Barajas, Miquel Vellvehí, Xavier Jordà, Josep Altet

IEEE Trans. Instrum. Meas., 2019

Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices.

Manuel Fernandez, Xavier Perpiñà, José Rebollo, Miquel Vellvehí, David Sanchez, Tomás Cabeza, Sergio Llorente, Xavier Jordà

IEEE Trans. Ind. Electron., 2019

2017

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs.

Manuel Fernandez, Xavier Perpiñà, Jaume Roig-Guitart, Miquel Vellvehí, Filip Bauwens, Marnix Tack, Xavier Jordà

IEEE Trans. Ind. Electron., 2017

2015

Functional and Consumption Analysis of Integrated Circuits Supplied by Inductive Power Transfer by Powering Modulation and Lock-In Infrared Imaging.

Javier Leon, Xavier Perpiñà, Jordi Sacristán, Miquel Vellvehí, Antoni Baldi, Xavier Jordà

IEEE Trans. Ind. Electron., 2015

SiC Integrated Circuit Control Electronics for High-Temperature Operation.

Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon

IEEE Trans. Ind. Electron., 2015

Characterization of phase change material systems using a thermal test device.

Xavier Jordà, Jesús Esarte, Xavier Perpiñà, Miquel Vellvehí, Gorka Argandoña, Maite Aresti

Microelectron. J., 2015

2014

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications.

Xavier Perpiñà, Xavier Jordà, Javier Leon, Miquel Vellvehí, Daniel Antón, Sergio Llorente

Microelectron. Reliab., 2014

Temperature effects on the ruggedness of SiC Schottky diodes under surge current.

Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà

Microelectron. Reliab., 2014

Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.

Josep Altet, José Luis González, Didac Gómez, Xavier Perpiñà, Wilfrid Claeys, Stéphane Grauby, Cédric Dufis, Miquel Vellvehí, Diego Mateo, Ferran Reverter, Stefan Dilhaire, Xavier Jordà

Microelectron. J., 2014

Review of temperature sensors as monitors for RF-MMW built-in testing and self-calibration schemes.

Josep Altet, Eduardo Aldrete-Vidrio, Ferran Reverter, Didac Gómez, José Luis González, Marvin Onabajo, José Silva-Martínez, B. Martineau, X. Perpiñà, Louay Abdallah, Haralampos-G. D. Stratigopoulos, Xavier Aragonès, Xavier Jordà, Miquel Vellvehí, Stefan Dilhaire, Salvador Mir, Diego Mateo

Proceedings of the IEEE 57th International Midwest Symposium on Circuits and Systems, 2014

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.

Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Thermal resistance investigations on new leadframe-based LED packages and boards.

B. Pardo, A. Gasse, A. Fargeix, Jiri Jakovenko, Robert J. Werkhoven, Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, T. Van Weelden, P. Bancken

Microelectron. Reliab., 2013

Design methodologies for reliability of SSL LED boards.

Jiri Jakovenko, J. Formánek, X. Perpiñà, Xavier Jordà, Miquel Vellvehí, Robert J. Werkhoven, Miroslav Husák, J. M. G. Kunen, P. Bancken, P. J. Bolt, A. Gasse

Microelectron. Reliab., 2013

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.

Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán

Proceedings of the European Solid-State Device Research Conference, 2013

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.

Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán

Proceedings of the ESSCIRC 2013, 2013

2012

Design for reliability of solid state lighting systems.

Xavier Perpiñà, Robert J. Werkhoven, Jiri Jakovenko, J. Formánek, Miquel Vellvehí, Xavier Jordà, Jos M. G. Kunen, Peter Bancken, Pieter Jan Bolt

Microelectron. Reliab., 2012

Thermal cycling analysis of high temperature die-attach materials.

Luis A. Navarro, Xavier Perpiñà, Miquel Vellvehí, Viorel Banu, Xavier Jordà

Microelectron. Reliab., 2012

DC temperature measurements for power gain monitoring in RF power amplifiers.

Josep Altet, Diego Mateo, Didac Gómez, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà

Proceedings of the 2012 IEEE International Test Conference, 2012

2011

Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.

Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

SiC Schottky Diodes for Harsh Environment Space Applications.

Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti

IEEE Trans. Ind. Electron., 2011

2007

Coupled electro-thermal simulation of a DC/DC converter.

Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán

Microelectron. Reliab., 2007

2004

Design considerations for 6.5 kV IGBT devices.

Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind

Microelectron. J., 2004

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.

Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán

Microelectron. J., 2004

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán

Microelectron. J., 2004

2002

Reduction of self-heating effect on SOIM devices.

Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán

Microelectron. Reliab., 2002

2001

Smart Temperature Sensor for On-Line Monitoring in Automotive Applications.

José Luis Merino, Sebastià A. Bota, A. Herms, Josep Samitier, Enric Cabruja, Xavier Jordà, Miquel Vellvehí, J. Bausells, A. Ferré, J. Bigorra

Proceedings of the 7th IEEE International On-Line Testing Workshop (IOLTW 2001), 2001