Minhan Mi

According to our database, Minhan Mi authored at least 6 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.

Sirui An, Minhan Mi, Pengfei Wang, Sijia Liu, Qing Zhu, Meng Zhang, Zhihong Chen, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., February, 2023

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology.

Jielong Liu, Chang Wu, Tao Guo, Kai Wang, Chengcheng Li, An Liu, Rui Zhou, Zhen Huang, Jiayan Wu, Minhan Mi, Xiaohua Ma

Proceedings of the IEEE International Conference on Integrated Circuits, 2023

2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao

Sci. China Inf. Sci., 2022

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications.

Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Xiaohua Ma, Yue Hao

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2015

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT.

Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao

IEICE Electron. Express, 2015