Ming Qiao
Orcid: 0000-0001-6325-9878
According to our database1,
Ming Qiao
authored at least 12 papers
between 2010 and 2024.
Collaborative distances:
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Bibliography
2024
Microelectron. J., 2024
2023
An ultralow specific on-resistance bidirectional trench power MOSFET with RESURF stepped oxide.
Microelectron. J., February, 2023
2022
Microelectron. J., 2022
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region.
Microelectron. J., 2022
Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology.
Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022
2021
Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer.
Microelectron. J., 2021
2016
Proceedings of the Geo-Spatial Knowledge and Intelligence, 2016
2015
Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015
2014
2013
ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications.
Microelectron. Reliab., 2013
2010
Int. J. Comput. Appl. Technol., 2010