Min-Tai Yu

According to our database, Min-Tai Yu authored at least 2 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory.

Hang-Ah Park, Sejun Park, Min-Tai Yu, Ye-Chan Kim, Cheon Ho Park, Jung Hoon Lee, Jun Eon Jin, Dawoon Jeung, Hauk Han, Tai-Soo Lim, Min-Kyu Jeong, Mincheol Park, Bong-Tae Park, Sunghoi Hur

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.

Changhwan Lee, Min-Tai Yu, Sejun Park, Hoki Lee, Bio Kim, Suhwan Lim, Jaeduk Lee, Sung-Hun Lee, Mincheol Park, Sujin Ahn, Sunghoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023