Min-Hung Lee

Orcid: 0000-0002-2007-2875

According to our database1, Min-Hung Lee authored at least 10 papers between 2015 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf<sub>1-x</sub>Zr<sub>X</sub>O<sub>2</sub> for Quantum Computing Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Endurance > 10<sup>11</sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Correlation between Access Polarization and High Endurance (~ 10<sup>12</sup> cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020
Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Steep Switching of In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications.
Sensors, 2018

2015
Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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