Min Gee Kim

According to our database, Min Gee Kim authored at least 5 papers between 2017 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2020

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process.

Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi

IEICE Trans. Electron., 2020

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO₂ Utilizing Pt Gate Electrodes.

Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi

IEICE Trans. Electron., 2020

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering.

Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig

Proceedings of the 2020 Device Research Conference, 2020

2019

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100).

Min Gee Kim, Shun'ichiro Ohmi

IEICE Trans. Electron., 2019

2017

Nonvolatile organic field-effect transistors fabricated on Al foil substrates.

Min Gee Kim, Soo Yong Kim, Dae-Hee Han, Byung-Eun Park

IEICE Electron. Express, 2017