Min-Chul Sun

According to our database, Min-Chul Sun authored at least 6 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells.

Kihwang Son, Seulki Park, Kyunghoon Jung, Jun-Gyu Kim, Younggun Ko, Keonyong Cheon, Changkeun Yoon, Jiho Kim, Jaehun Jeong, Taehun Myung, Changmin Hong, Weonwi Jang, Min-Chul Sun, Sungil Jo, Ju-Youn Kim, Byungmoo Song, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2013

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel.

Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park

IEICE Trans. Electron., 2013

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications.

Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park

IEICE Trans. Electron., 2013

2012

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors.

Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park

IEICE Trans. Electron., 2012

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using <i>V_T</i>-Control Doping Region.

Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park

IEICE Trans. Electron., 2012

Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance.

Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.

IEICE Electron. Express, 2012