Milan Pesic
According to our database1,
Milan Pesic
authored at least 17 papers
between 2016 and 2024.
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Timeline
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Bibliography
2024
Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development.
Proceedings of the IEEE International Memory Workshop, 2024
2023
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.
Proceedings of the IEEE International Memory Workshop, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2019
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors.
Proceedings of the Device Research Conference, 2019
2017
PhD thesis, 2017
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications.
Proceedings of the 46th European Solid-State Device Research Conference, 2016