Mikael Östling

According to our database, Mikael Östling authored at least 14 papers between 1999 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal.

Laura Zurauskaite, Mikael Östling, Per-Erik Hellström

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2017

Gated base structure for improved current gain in SiC bipolar technology.

B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Toward effective passivation of graphene to humidity sensing effects.

Anderson D. Smith, Karim Elgammal, Xuge Fan, Max Christian Lemme, Anna Delin, Frank Niklaus, Mikael Östling

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Step tunneling-enhanced hot-electron injection in vertical graphene base transistors.

Sam Vaziri, Melkamu Belete, Anderson D. Smith, Eugenio Dentoni Litta, Grzegorz Lupina, Max Christian Lemme, Mikael Östling

Proceedings of the 45th European Solid State Device Research Conference, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.

Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

PDMS-supported graphene transfer using intermediary polymer layers.

Sam Vaziri, Anderson D. Smith, Grzegorz Lupina, Max Christian Lemme, Mikael Östling

Proceedings of the 44th European Solid State Device Research Conference, 2014

Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer.

Maryam Olyaei, B. Gunnar Malm, Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs.

Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling

Proceedings of the European Solid-State Device Research Conference, 2013

2012

An integration approach for graphene double-gate transistors.

Sam Vaziri, Anderson D. Smith, Christoph Henkel, Mikael Östling, Max Christian Lemme, Grzegorz Lupina, Gunther Lippert, Jarek Dabrowski, Wolfgang Mehr

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects.

Maziar M. Naiini, Christoph Henkel, B. Gunnar Malm, Mikael Östling

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

High power devices in wide bandgap semiconductors.

Mikael Östling

Sci. China Inf. Sci., 2011

2001

Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors.

Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling

Microelectron. Reliab., 2001

1999

Bipolar Technology.

Jan V. Grahn, Mikael Östling

Proceedings of the VLSI Handbook., 1999