Miguel Urteaga

According to our database, Miguel Urteaga authored at least 19 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process.

Eythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James F. Buckwalter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz.

Rob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

InP HBT Technologies for sub-THz Communications.

Miguel Urteaga, Zach Griffith, A. Arias-Purdue, A. Carter, Petra Rowell, J. Hacker, B. Brar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

High-Gain 500-GHz InP HBT Power Amplifiers.

Jerome Cheron, Rob D. Jones, Richard A. Chamberlin, Dylan F. Williams, Miguel E. Urteaga, Kassiopeia A. Smith, Nicholas R. Jungwirth, Bryan T. L. Bosworth, Christian J. Long, Nathan D. Orloff, Peter H. Aaen, Ari D. Feldman

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2019

A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers.

Arda Simsek, Seong-Kyun Kim, Ahmed S. H. Ahmed, Robert Maurer, Miguel Urteaga, Mark J. W. Rodwell

Proceedings of the IEEE Radio and Wireless Symposium, 2019

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors.

Jonathan P. Sculley, Yihao Fang, Brian Markman, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder

Proceedings of the Device Research Conference, 2019

Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact.

Andrew D. Carter, Miguel E. Urteaga, Petra Rowell, Joshua Bergman, Andrea Arias

Proceedings of the Device Research Conference, 2019

Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers.

Jonathan P. Sculley, Brian Markman, Utku Soylu, Yihao Fang, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT.

Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran, Bobby Brar

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers.

Yihao Fang, Jonathan P. Sculley, Miguel E. Urteaga, Andy D. Carter, Paul D. Yoder, Mark J. W. Rodwell

Proceedings of the 76th Device Research Conference, 2018

8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology.

Ahmed S. H. Ahmed, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017

InP HBT Technologies for THz Integrated Circuits.

Miguel Urteaga, Zach Griffith, Munkyo Seo, Jonathan Hacker, Mark J. W. Rodwell

Proc. IEEE, 2017

An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT.

Seong-Kyun Kim, Robert Maurer, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2017

2015

A 529 GHz dynamic frequency divider in 130 nm InP HBT process.

Munkyo Seo, John Hacker, Miguel Urteaga, Anders Skalare, Mark J. W. Rodwell

IEICE Electron. Express, 2015

2014

Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns.

Hyun-Chul Park, Saeid Daneshgar, Zach Griffith, Miguel Urteaga, Byung-Sung Kim, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2014

2011

InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz.

Munkyo Seo, Miguel Urteaga, Jonathan Hacker, Adam Young, Zach Griffith, Vibhor Jain, Richard Pierson, Petra Rowell, Anders Skalare, Alejandro Peralta, Robert Lin, David Pukala, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2011

2005

Transistor and circuit design for 100-200-GHz ICs.

Zach Griffith, Yingda Dong, Dennis W. Scott, Yun Wei, Navin Parthasarathy, Mattias Dahlström, Christoph Kadow, Vamsi Paidi, Mark J. W. Rodwell, Miguel Urteaga, Richard Pierson, Petra Rowell, Bobby Brar, Sangmin Lee, Nguyen X. Nguyen, Chahn Nguyen

IEEE J. Solid State Circuits, 2005

2003

G-band (140-220-GHz) InP-based HBT amplifiers.

Miguel Urteaga, Dennis W. Scott, Sundararajan Krishnan, Yun Wei, Mattias Dahlström, Zach Griffith, Navin Parthasarathy, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2003

2001

An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology.

Shrinivasan Jaganathan, Sundararajan Krishnan, Dino Mensa, Thomas Mathew, Yoram Betser, Yun Wei, Dennis W. Scott, Miguel Urteaga, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2001