Michele Esposto

According to our database, Michele Esposto authored at least 1 paper in 2010.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2010

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress.

Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini

Microelectron. Reliab., 2010