Michel Bosman

According to our database, Michel Bosman authored at least 14 papers between 2014 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films.

Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics.

Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

BalanSAR: Using Spatial Augmented Reality to Train Children's Balancing Skills in Physical Education.

Danica Mast, Michel Bosman, Sylvia Schipper, Sanne de Vries

Proceedings of the Tenth International Conference on Tangible, 2017

Adding Interactivity to BalanSAR: a Spatial Augmented Reality Game for Balancing in Physical Education.

Danica Mast, Michel Bosman, Sylvia Schipper, Samantha Diederiks, Sanne de Vries

Proceedings of the Extended Abstracts Publication of the Annual Symposium on Computer-Human Interaction in Play, 2017

2016

Conductive filament formation at grain boundary locations in polycrystalline HfO₂ -based MIM stacks: Computational and physical insight.

Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2016

Compliance current dominates evolution of NiSi₂ defect size in Ni/dielectric/Si RRAM devices.

Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey

Microelectron. Reliab., 2016

2015

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO₂/SiO_x dielectric stacks for failure analysis.

Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2015

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach.

Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2015

Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2015

Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM.

Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO₂ on reliability of SiO_x interfacial layer.

Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey

Microelectron. Reliab., 2014

Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective.

Nagarajan Raghavan, Michel Bosman, Kin Leong Pey

Microelectron. Reliab., 2014

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices.

Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey

Microelectron. Reliab., 2014