Michael Waltl
Orcid: 0000-0001-6042-759X
According to our database1,
Michael Waltl
authored at least 24 papers
between 2014 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
2014
2016
2018
2020
2022
2024
0
1
2
3
4
5
6
2
2
1
4
2
4
2
3
1
2
1
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2024
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata.
Proceedings of the 26th IEEE European Test Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the VLSI Design and Test - 23rd International Symposium, 2019
Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019
2018
Microelectron. Reliab., 2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018
Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.
Proceedings of the 76th Device Research Conference, 2018
2017
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014