Michael Nelhiebel

According to our database, Michael Nelhiebel authored at least 16 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests.

D. Wieland, S. Ofner, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018

Characterization of cyclic delamination behavior of thin film multilayers.

Thomas Walter, Golta Khatibi, Michael Nelhiebel, M. Stefenelli

Microelectron. Reliab., 2018

Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures.

Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann

Microelectron. Reliab., 2018

2017

Exploring the thermal limit of GaN power devices under extreme overload conditions.

Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann

Microelectron. Reliab., 2017

High cycle fatigue testing of thermosonic ball bonds.

Alice Lassnig, Martin Lederer, Golta Khatibi, Rainer Pelzer, W. Robl, Michael Nelhiebel

Microelectron. Reliab., 2017

2015

Inspection of electrical interconnections within power ICs via magneto-optical imaging.

Florian W. Dietachmayr, Patrick A. Hölzl, Bernhard G. Zagar, Michael Nelhiebel

Proceedings of the 2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings, 2015

2014

Modeling fatigue life of power semiconductor devices with ε-N fields.

Olivia Bluder, Kathrin Plankensteiner, Michael Nelhiebel, Walther Heinz, Christian Leitner

Proceedings of the 2014 Winter Simulation Conference, 2014

2013

Effective and reliable heat management for power devices exposed to cyclic short overload pulses.

Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner

Microelectron. Reliab., 2013

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser

Microelectron. Reliab., 2013

2012

High temperature storage reliability investigation of the Al-Cu wire bond interface.

Rainer Pelzer, Michael Nelhiebel, Robert Zink, Stefan Wöhlert, Alice Lassnig, Golta Khatibi

Microelectron. Reliab., 2012

Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices.

Stefano de Filippis, Helmut Köck, Michael Nelhiebel, Vladimír Kosel, Stefan Decker, Michael Glavanovics, Andrea Irace

Microelectron. Reliab., 2012

2011

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.

Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel

Microelectron. Reliab., 2011

A reliable technology concept for active power cycling to extreme temperatures.

Michael Nelhiebel, Robert Illing, Christoph Schreiber, S. Wöhlert, S. Lanzerstorfer, Markus Ladurner, C. Kadow, Stefan Decker, Donald Dibra, H. Unterwalcher, M. Rogalli, W. Robl, T. Herzig, M. Poschgan, M. Inselsbacher, Michael Glavanovics, Sylvain Fraïssé

Microelectron. Reliab., 2011

Improved thermal management of low voltage power devices with optimized bond wire positions.

Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany

Microelectron. Reliab., 2011

2008

On the temperature dependence of NBTI recovery.

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser

Microelectron. Reliab., 2008

2005

Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide.

Michael Nelhiebel, J. Wissenwasser, Thomas Detzel, A. Timmerer, E. Bertagnolli

Microelectron. Reliab., 2005