Michael L. Alles

According to our database, Michael L. Alles authored at least 9 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Charge Trapping in Irradiated 3D Devices and ICs (Invited).

En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.

Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019

Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation.

M. L. Breeding, Robert A. Reed, K. M. Warren, Michael L. Alles

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Multi-cell soft errors at the 16-nm FinFET technology node.

N. Tam, Bharat L. Bhuva, Lloyd W. Massengill, Dennis R. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Total-ionizing-dose effects and reliability of carbon nanotube FET devices.

Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis

Microelectron. Reliab., 2014

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.

Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li

Microelectron. Reliab., 2012

2011

The sensitivity of radiation-induced leakage to STI topology and sidewall doping.

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby

Microelectron. Reliab., 2011

2008

Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices.

Alexander I. Fedoseyev, Marek Turowski, Michael L. Alles, Robert A. Weller

Math. Comput. Simul., 2008

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices.

Alexander I. Fedoseyev, Marek Turowski, Ashok Raman, Michael L. Alles, Robert A. Weller

Proceedings of the Computational Science, 2008