Michael Dammann

According to our database, Michael Dammann authored at least 5 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2024

2023

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2023

2021

An Empirical Evaluation of Machine Learning Methods for the Insurance Industry.

Michael Dammann, Nicolai Gnoss, Pamela Kunert, Eike-Christian Ramcke, Tobias Schreier, Ulrike Steffens, Olaf Zukunft

Proceedings of Sixth International Congress on Information and Communication Technology, 2021

2020

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.

Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching.

Patrick Waltereit, Marina Preschle, Stefan Müller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner

Proceedings of the 76th Device Research Conference, 2018