Miaomiao Wang

According to our database, Miaomiao Wang authored at least 17 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Backside Power Distribution for Nanosheet Technologies Beyond 2nm.

Ruilong Xie, Wonhyuk Hong, Chen Zhang, Jongjin Lee, Kevin Brew, Richard Johnson, Nicholas A. Lanzillo, Hosadurga Shobha, Taesun Kim, Panjae Park, Shogo Mochizuki, Iqbal Saraf, Chanro Park, Lei Zhuang, Clifford Osborn, Wai Kin Li, Feng Liu, Muthumanickam Sankarapandian, Chung Ju Yang, Juntao Li, Lukas Tierney, Ruturaj Pujari, Yasir Sulehria, Yuncheng Song, Huimei Zhou, Miaomiao Wang, Michael Belyansky, Somnath Ghosh, Haojun Zhang, Koichi Motoyama, Debarghya Sarkar, Wukang Kim, Albert Chu, Tao Li, Fabio Carta, Oleg Gluschenkov, Joongsuk Oh, Matthew Malley, Pinlei Chu, Son Nguyen, Katherine Luedders, Joe Lee, Shahrukh Khan, Prabudhya Roy Chowdhury, Huai Huang, Abir Shadman, Stuart Sieg, Daniel Dechene, Daniel Edelstein, John Arnold, Tenko Yamashita, Kisik Choi, Kang-ill Seo, Dechao Guo, Huiming Bu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling.

Huimei Zhou, Miaomiao Wang, Ernest Y. Wu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction.

Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices.

Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul, Yasir Sulehria

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

SiGe Gate-All-around Nanosheet Reliability.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.

Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

TDDB Reliability in Gate-All-Around Nanosheet.

Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.

Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor.

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A new technique for evaluating stacked nanosheet inner spacer TDDB reliability.

Tian Shen, Koji Watanabe, Huimei Zhou, Michael Belyansky, Erin Stuckert, Jingyun Zhang, Andrew Greene, Veeraraghavan S. Basker, Miaomiao Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.

Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2019

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.

Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.

Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Hot carrier reliability in ultra-scaled sige channel p-FinFETs.

Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

An overview on rough neural networks.

Hongmei Liao, Shifei Ding, Miaomiao Wang, Gang Ma

Neural Comput. Appl., 2016

2015

Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET.

Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen

Proceedings of the IEEE International Reliability Physics Symposium, 2015