Merlyne M. De Souza

According to our database, Merlyne M. De Souza authored at least 7 papers between 2001 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch.

Peng Luo, Hong Yao Long, Mark R. Sweet, Merlyne M. De Souza, Ekkanath Madathil Shankara Narayanan

Proceedings of the 26th IEEE International Symposium on Industrial Electronics, 2017

2005

Innovation in power semiconductor industry: past and future.

Natalia A. Moguilnaia, Konstantin V. Vershinin, Mark R. Sweet, Oana I. Spulber, Merlyne M. De Souza, Ekkanath Madathil Shankara Narayanan

IEEE Trans. Engineering Management, 2005

2004

Influence of mobility model on extraction of stress dependent source-drain series resistance.

Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala

Microelectron. Reliab., 2004

Progress in MOS-controlled bipolar devices and edge termination technologies.

Ekkanath Madathil Shankara Narayanan, Oana I. Spulber, Mark R. Sweet, J. V. S. C. Bose, Konstantin V. Verchinine, N. Luther-King, Natalia A. Moguilnaia, Merlyne M. De Souza

Microelectron. J., 2004

A novel double RESURF LDMOS for HVIC's.

S. Hardikar, Merlyne M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan

Microelectron. J., 2004

2003

Characterisation of series resistance degradation through charge pumping technique.

S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza

Microelectron. Reliab., 2003

2001

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.

Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates

Microelectron. Reliab., 2001