Mengxuan Yang
Orcid: 0000-0002-7149-9414
According to our database1,
Mengxuan Yang
authored at least 5 papers
between 2019 and 2025.
Collaborative distances:
Collaborative distances:
Timeline
2019
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2022
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2025
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Book In proceedings Article PhD thesis Dataset OtherLinks
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Bibliography
2025
SIAM J. Appl. Math., 2025
2022
Physical investigation of subthreshold swing degradation behavior in negative capacitance FET.
Sci. China Inf. Sci., 2022
Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors.
Sci. China Inf. Sci., 2022
A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2019
Deep insight into the voltage amplification effect from ferroelectric negative capacitance.
Sci. China Inf. Sci., 2019