Mehak Ashraf Mir

According to our database1, Mehak Ashraf Mir authored at least 4 papers between 2023 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.
Proceedings of the IEEE International Reliability Physics Symposium, 2023


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