Mayank Shrivastava

Orcid: 0000-0003-4775-7978

According to our database1, Mayank Shrivastava authored at least 57 papers between 2011 and 2024.

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Bibliography

2024
Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Expressive and Efficient Representation Learning for Ranking Links in Temporal Graphs.
Proceedings of the ACM Web Conference 2023, 2023

OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated State.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Circuit Reliability of $\text{MoS}_{2}$ Channel Based 2D Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

3D Approaches to Engineer Holding Voltage of SCR.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Multi-attention TransUNet - A Transformer Approach for Image Description Generation.
Proceedings of the Evolution in Computational Intelligence, 2023

Max-Quantile Grouped Infinite-Arm Bandits.
Proceedings of the International Conference on Algorithmic Learning Theory, 2023

2022
CASPR: Customer Activity Sequence-based Prediction and Representation.
CoRR, 2022

Federated Graph Representation Learning using Self-Supervision.
CoRR, 2022

Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs.
IEEE Access, 2022

Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Are Argon and Nitrogen Gases Really Inert to Graphene Devices?
Proceedings of the Device Research Conference, 2022

2021
A Novel High Voltage Drain Extended FinFET SCR for SoC Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight.
Proceedings of the 2020 Device Research Conference, 2020

2019
First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
On the ESD Reliability Issues in Carbon Electronics: Graphene and Carbon Nano Tubes.
Proceedings of the 31st International Conference on VLSI Design and 17th International Conference on Embedded Systems, 2018

Pinot: Realtime OLAP for 530 Million Users.
Proceedings of the 2018 International Conference on Management of Data, 2018

On the ESD behavior of a-Si: H based thin film transistors: Physical insights, design and technological implications.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

2016
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package.
Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016

2015
Towards predictable and risk-free enterprise systems.
Proceedings of the 2015 IEEE International Conference on Data Science and Advanced Analytics, 2015

2011
Two-stream indexing for spoken web search.
Proceedings of the 20th International Conference on World Wide Web, 2011


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