Maximilian W. Feil

According to our database, Maximilian W. Feil authored at least 4 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.

Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.

Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger

Proceedings of the IEEE International Reliability Physics Symposium, 2021