Maximilian Dammann

According to our database, Maximilian Dammann authored at least 14 papers between 2002 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress.

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause, Andreas Graff, Michél Simon-Najasek

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay

Microelectron. Reliab., 2018

2017

Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects.

Andreas Zibold, Maximilian Dammann, Ralf Schmidt, Helmer Konstanzer, Michael Kunzer

Microelectron. Reliab., 2017

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.

Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek

Microelectron. Reliab., 2017

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.

Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.

Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2014

Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy.

Christoph Gerhard, Maximilian Dammann, Stephan Wieneke, Wolfgang Viöl

Micromachines, 2014

2013

Qualification of 50 V GaN on SiC technology for RF power amplifiers.

P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann

Microelectron. Reliab., 2013

2011

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.

M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2011

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson

Microelectron. Reliab., 2009

2004

Reliability of 70 nm metamorphic HEMTs.

Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla

Microelectron. Reliab., 2004

2002

Reliability of Metamorphic HEMTs for Power Applications.

Maximilian Dammann, F. Benkhelifa, M. Meng, W. Jantz

Microelectron. Reliab., 2002

High-field step-stress and long term stability of PHEMTs with different gate and recess lengths.

Paolo Cova, Roberto Menozzi, Maximilian Dammann, T. Feltgen, W. Jantz

Microelectron. Reliab., 2002