Maxim V. Kozhukhov

According to our database, Maxim V. Kozhukhov authored at least 4 papers between 2011 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C).

Konstantin O. Petrosyants, Lev M. Sambursky, Maxim V. Kozhukhov, Mamed R. Ismail-Zade, Igor A. Kharitonov, Bo Li

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2021

2019

Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem.

Konstantin O. Petrosyants, Maxim V. Kozhukhov, Dmitry Popov

Proceedings of the 22nd IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2019

2014

SPICE model parameters extraction taking into account the ionizing radiation effects.

Konstantin O. Petrosyants, Maxim V. Kozhukhov

Proceedings of the 2014 East-West Design & Test Symposium, 2014

2011

Si BJT and SiGe HBT performance modeling after neutron radiation exposure.

Konstantin O. Petrosyants, Eric Vologdin, Dmitry Smirnov, Rostislav Torgovnikov, Maxim V. Kozhukhov

Proceedings of the 9th East-West Design & Test Symposium, 2011