Matthias Wespel

According to our database, Matthias Wespel authored at least 3 papers between 2014 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.

Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.

Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2014