Matthias Sinnwell

According to our database, Matthias Sinnwell authored at least 2 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2024

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2024

2023

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz.

Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay

Proceedings of the Device Research Conference, 2023