Matthew R. Wordeman

According to our database, Matthew R. Wordeman authored at least 17 papers between 1992 and 2017.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2017

Analytical test of 3D integrated circuits.

Raphael Robertazzi, Micheal Scheurman, Matt Wordeman, Shurong Tian, Christy Tyberg

Proceedings of the IEEE International Test Conference, 2017

2016

Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias.

Toshiaki Kirihata, John Golz, Matthew R. Wordeman, Pooja Batra, Gary W. Maier, Norman Robson, Troy L. Graves-abe, Daniel Berger, Subramanian S. Iyer

IEEE J. Emerg. Sel. Topics Circuits Syst., 2016

Thermal analysis of multi-layer functional 3D logic stacks.

Michael Scheuermann, Shurong Tian, Raphael Robertazzi, Matthew R. Wordeman, C. Bergeron, H. Jacobson, Phillip J. Restle, Joel Silberman, Christy Tyberg

Proceedings of the 2016 IEEE International 3D Systems Integration Conference, 2016

2012

A shorted global clock design for multi-GHz 3D stacked chips.

Liang-Teck Pang, Phillip J. Restle, Matthew R. Wordeman, Joel A. Silberman, Robert L. Franch, Gary W. Maier

Proceedings of the Symposium on VLSI Circuits, 2012

A 3D system prototype of an eDRAM cache stacked over processor-like logic using through-silicon vias.

Matt Wordeman, Joel Silberman, Gary W. Maier, Michael Scheuermann

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2008

Wafer-level 3D integration technology.

Steven J. Koester, Albert M. Young, Roy R. Yu, Sampath Purushothaman, Kuan-Neng Chen, Douglas C. La Tulipe Jr., Narender Rana, Leathen Shi, Matthew R. Wordeman, Edmund J. Sprogis

IBM J. Res. Dev., 2008

2005

An 800-MHz embedded DRAM with a concurrent refresh mode.

Toshiaki Kirihata, Paul C. Parries, David R. Hanson, Hoki Kim, John Golz, Gregory Fredeman, Raj Rajeevakumar, John Griesemer, Norman Robson, Alberto Cestero, Babar A. Khan, Geng Wang, Matt Wordeman, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2005

2000

1-GHz fully pipelined 3.7-ns address access time 8 k×1024 embedded synchronous DRAM macro.

Osamu Takahashi, Sang H. Dhong, Manabu Ohkubo, Shohji Onishi, Robert H. Dennard, Robert Hannon, Scott Crowder, Subramanian S. Iyer, Matthew R. Wordeman, Bijan Davari, William B. Weinberger, Naoaki Aoki

IEEE J. Solid State Circuits, 2000

A 7F² cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs.

Heinz Hoenigschmid, Alexander Frey, John K. DeBrosse, Toshiaki Kirihata, Gerhard Mueller, Daniel W. Storaska, Gabriel Daniel, Gerd Frankowsky, Kevin P. Guay, David R. Hanson, Louis Lu-Chen Hsu, Brian Ji, Dmitry G. Netis, Steve Panaroni, Carl Radens, Armin M. Reith, Hartmud Terletzki, Oliver Weinfurtner, Johann Alsmeier, Werner Weber, Matthew R. Wordeman

IEEE J. Solid State Circuits, 2000

1999

A 390-mm², 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture.

Toshiaki Kirihata, Gerhard Mueller, Brian Ji, Gerd Frankowsky, John M. Ross, Hartmud Terletzki, Dmitry G. Netis, Oliver Weinfurtner, David R. Hanson, Gabriel Daniel, Louis Lu-Chen Hsu, Daniel W. Storaska, Armin M. Reith, Marco A. Hug, Kevin P. Guay, Manfred Selz, Peter Poechmueller, Heinz Hoenigschmid, Matthew R. Wordeman

IEEE J. Solid State Circuits, 1999

1998

A 220-mm², four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture.

Toshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl

IEEE J. Solid State Circuits, 1998

1997

Flexible test mode approach for 256-Mb DRAM.

Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik

IEEE J. Solid State Circuits, 1997

Development of a High Bandwidth Merged Logic/DRAM Multimedia Chip.

W. K. Luk, Yasunao Katayama, Wei Hwang, Matthew R. Wordeman, Toshiaki Kirihata, Akashi Satoh, Seiji Munetoh, Hing Wong, B. El-Kareh, P. Xiao, Rajiv V. Joshi

Proceedings of the Proceedings 1997 International Conference on Computer Design: VLSI in Computers & Processors, 1997

1996

A 286 mm² 256 Mb DRAM with ×32 both-ends DQ.

Yohji Watanabe, Ring Wong, Toshiaki Kirihata, Daisuke Kato, John K. DeBrosse, Takahiko Rara, Munehiro Yoshida, Rideo Mukai, Khandker N. Quader, Takeshi Nagai, Peter Poechmueller, Peter Pfefferl, Matthew R. Wordeman, Shuso Fujii

IEEE J. Solid State Circuits, 1996

Fault-tolerant designs for 256 Mb DRAM.

Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao

IEEE J. Solid State Circuits, 1996

1995

A half-micron CMOS logic generation.

Charles W. Koburger III, William F. Clark, James W. Adkisson, Eric Adler, Paul E. Bakeman, Albert S. Bergendahl, Alan B. Botula, W. Chang, Bijan Davari, John H. Givens, Howard H. Hansen, Steven J. Holmes, David V. Horak, Chung Hon Lam, Jerome B. Lasky, Stephen E. Luce, Randy W. Mann, Glen L. Miles, James S. Nakos, Edward J. Nowak, Ghavam G. Shahidi, Yuan Taur, Francis R. White, Matthew R. Wordeman

IBM J. Res. Dev., 1995

1992

Numerical modeling of advanced semiconductor devices.

Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh

IBM J. Res. Dev., 1992