Matteo Meneghini

Orcid: 0000-0003-2421-505X

According to our database¹, Matteo Meneghini authored at least 100 papers between 2006 and 2024.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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Book

In proceedings

Article

PhD thesis

Dataset

Other

Bibliography

2024

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes.

[BibT_eX]

[DOI]

IEEE Access, 2023

Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.

[BibT_eX]

[DOI]

Zhan Gao

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Modeling Hot-Electron Trapping in GaN-based HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

[BibT_eX]

[DOI]

Zhan Gao

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

[BibT_eX]

[DOI]

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Full Optical Contactless Thermometry Based on LED Photoluminescence.

[BibT_eX]

[DOI]

IEEE Trans. Instrum. Meas., 2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

[BibT_eX]

[DOI]

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Current crowding as a major cause for InGaN LED degradation at extreme high current density.

[BibT_eX]

[DOI]

Proceedings of the IECON 2021, 2021

Charge Trapping in GaN Power Transistors: Challenges and Perspectives.

[BibT_eX]

[DOI]

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.

[BibT_eX]

[DOI]

Francesca Chiocchetta

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.

[BibT_eX]

[DOI]

Nicolò Zagni

Alessandro Chini

Francesco Maria Puglisi

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

[BibT_eX]

[DOI]

Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project.

[BibT_eX]

[DOI]

Sensors, 2018

Current induced degradation study on state of the art DUV LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Positive and negative threshold voltage instabilities in GaN-based transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Degradation of vertical GaN FETs under gate and drain stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

[BibT_eX]

[DOI]

Andrea Natale Tallarico

Gaudenzio Meneghesso

Enrico Zanoni

Microelectron. Reliab., 2017

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Long-term degradation of InGaN-based laser diodes: Role of defects.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.

[BibT_eX]

[DOI]

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Degradation of InGaN-based LEDs related to charge diffusion and build-up.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

2015

Failure causes and mechanisms of retrofit LED lamps.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Long-term degradation mechanisms of mid-power LEDs for lighting applications.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Marie-Antoinette di Forte-Poisson

Microelectron. Reliab., 2015

Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting.

[BibT_eX]

[DOI]

Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

Analysis of the mechanisms limiting the reliability of retrofit LED lamps.

[BibT_eX]

[DOI]

Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

Modeling challenges for high-efficiency visible light-emitting diodes.

[BibT_eX]

[DOI]

Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.

[BibT_eX]

[DOI]

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Proton induced trapping effect on space compatible GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

[BibT_eX]

[DOI]

Marie-Antoinette di Forte-Poisson

Microelectron. Reliab., 2014

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Traps localization and analysis in GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

[BibT_eX]

[DOI]

Alessandro Paccagnella

Gaudenzio Meneghesso

Enrico Zanoni

Christian Dua

Marie-Antoinette di Forte-Poisson

Raphael Aubry

Mourad Oualli

Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

High performance high reliability AlN/GaN DHFET.

[BibT_eX]

[DOI]

Proceedings of the 44th European Solid State Device Research Conference, 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

[BibT_eX]

[DOI]

Proceedings of the 44th European Solid State Device Research Conference, 2014

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.

[BibT_eX]

[DOI]

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

ESD characterization of multi-chip RGB LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

"Hot-plugging" of LED modules: Electrical characterization and device degradation.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

Thermal and electrical investigation of the reverse bias degradation of silicon solar cells.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.

[BibT_eX]

[DOI]

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Chip and package-related degradation of high power white LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Phosphors for LED-based light sources: Thermal properties and reliability issues.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

2011

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

Degradation mechanisms of high-power white LEDs activated by current and temperature.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

2010

Reliability evaluation for Blu-Ray laser diodes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

Defect-related degradation of Deep-UV-LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

2009

Reliability analysis of InGaN Blu-Ray laser diode.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2009

2007

High temperature electro-optical degradation of InGaN/GaN HBLEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2007

An Analysis of the Compositional Techniques in John Chowning's <i>Stria</i>.

[BibT_eX]

[DOI]

Matteo Meneghini

Comput. Music. J., 2007

2006

High brightness GaN LEDs degradation during dc and pulsed stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2006

Matteo Meneghini

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