Matteo Buffolo
Orcid: 0000-0002-9255-6457
According to our database1,
Matteo Buffolo
authored at least 12 papers
between 2014 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes.
IEEE Access, 2023
2021
IEEE Trans. Instrum. Meas., 2021
Current crowding as a major cause for InGaN LED degradation at extreme high current density.
Proceedings of the IECON 2021, 2021
2018
Microelectron. Reliab., 2018
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress.
Microelectron. Reliab., 2018
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits.
Microelectron. Reliab., 2018
2017
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density.
Microelectron. Reliab., 2017
2016
Microelectron. Reliab., 2016
2015
Microelectron. Reliab., 2015
Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015
2014
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.
Microelectron. Reliab., 2014