Massimo Rudan

According to our database, Massimo Rudan authored at least 24 papers between 1987 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems.

Manel Hammami, Gabriele Grandi, Massimo Rudan

Proceedings of the IECON 2016, 2016

Closed-form transition rate in hopping conduction.

Enrico Piccinini, Massimo Rudan, Rossella Brunetti

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides.

Enrico Piccinini, Massimo Rudan, Fabrizio Buscemi, Rossella Brunetti

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Modeling the dynamic self-heating of PCM.

Giuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Andrea Cappelli

Proceedings of the European Solid-State Device Research Conference, 2013

2002

Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits.

Elena Gnani, Vincenzo Giudicissi, Radu Vissarion, Claudio Contiero, Massimo Rudan

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2002

2001

Calculation of Transport Parameters of SiO₂ Polymorphs.

Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan

VLSI Design, 2001

2000

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices.

Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani

VLSI Design, 2000

1998

An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices.

Maria Cristina Vecchi, Jan Mohring, Massimo Rudan

VLSI Design, 1998

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE.

Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan

VLSI Design, 1998

Transient Analysis of Silicon Devices Using the Hydrodynamic Model.

Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan

VLSI Design, 1998

Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model.

Rossella Brunetti, Maria Cristina Vecchi, Massimo Rudan

VLSI Design, 1998

Recent Advances in Device Simulation Using Standard Transport Models.

Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala

VLSI Design, 1998

1997

An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation [MOS transistors].

Maria Cristina Vecchi, Jan Mohring, Massimo Rudan

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1997

1996

AC analysis of amorphous silicon devices.

Aurelio Pellegrini, Luigi Colalongo, Marina Valdinoci, Massimo Rudan

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1996

Device simulation for smart integrated systems (DESSIS).

Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli

Proceedings of Third International Conference on Electronics, Circuits, and Systems, 1996

1995

On the Structure and Closure-Condition of the Hydrodynamic Model.

Massimo Rudan, Giorgio Baccarani

VLSI Design, 1995

1993

Numerical simulation of optical devices.

Maria Cristina Vecchi, Massimo Rudan, Giovanni Soncini

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1991

Hydrodynamic simulation of impact-ionization effects in p-n junctions.

Wolfgang Quade, Massimo Rudan, Eckehard Schöll

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991

Boundary fitted coordinated generation for device analysis on composite and complicated geometries.

Zsolt Miklós Kovács-Vajna, Massimo Rudan

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991

1990

Investigation of non-local transport phenomena in small semiconductor devices.

Antonio Gnudi, Farouk Odeh, Massimo Rudan

Eur. Trans. Telecommun., 1990

Three-dimensional simulation of VLSI structures.

Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani

Eur. Trans. Telecommun., 1990

1989

Adaptive mesh generation preserving the quality of the initial grid.

Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989

1988

A new discretization strategy of the semiconductor equations comprising momentum and energy balance.

Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988

1987

Sensitivity Analysis for Device Design.

Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1987