Massimo Boscaglia

According to our database, Massimo Boscaglia authored at least 2 papers between 2021 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer.

Mario Santo Alessandrino, Beatrice Carbone, Francesco Cordiano, Bruna Mazza, Alfio Russo, W. Coco, Massimo Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, Elisa Vitanza, Patrick Fiorenza

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC.

Bruna Mazza, Salvatore Patané, Francesco Cordiano, Massimiliano Giliberto, Giovanni Renna, Andrea Severino, Edoardo Zanetti, Massimo Boscaglia, Giovanni Franco

Proceedings of the IEEE International Reliability Physics Symposium, 2021