Masayoshi Ohkawa

According to our database1, Masayoshi Ohkawa authored at least 2 papers between 1989 and 1996.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

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Bibliography

1996
A 98 mm<sup>2</sup> die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell.
IEEE J. Solid State Circuits, 1996

1989
A 0.1- mu A standby current, ground-bounce-immune 1-Mbit CMOS SRAM.
IEEE J. Solid State Circuits, December, 1989


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